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TK7A90E - Silicon N-Channel MOSFET

TK7A90E Description

TK7A90E MOSFETs Silicon N-Channel MOS (π-MOS) TK7A90E 1.Applications * Switching Voltage Regulators 2..

TK7A90E Features

* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ. ) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS Start of commercial production 1 2013-

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Silicon N-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor TK7A90E-like datasheet

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