TK7P50D Datasheet - Toshiba Semiconductor

TK7P50D Silicon N-Channel MOSFET

TK7P50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK7P50D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 6.6 ± 0.2 5.34 ± 0.13 1.08±0.2 Unit: mm 0.58MAX 1.01MAX Absolute Maximum Ratings (Ta = 25°C) 0.07 ± 0.07 1.52 C.

TK7P50D Features

* mbustions or explosions, safety devic

TK7P50D Datasheet (200.21 KB)