TPC8118 Datasheet - Toshiba Semiconductor

TPC8118 P-Channel MOSFET

www.DataSheet4U.com TPC8118 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8118 Notebook PC Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID =.

TPC8118 Features

* mize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of

TPC8118_ToshibaSemiconductor.pdf