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TTA007 Datasheet - Toshiba Semiconductor

TTA007 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type TTA007 TTA007 High-Speed Switching Applications DC-DC Converter Applications Unit: mm High DC current gain : hFE = 200 to 500 (IC = 0.1 A) Low collector-emitter saturation voltage : VCE(sat) = 0.2 V (max) High-speed switching : tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO .

TTA007_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TTA007

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

199.97 KB

Description:

Silicon pnp transistor.

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TTA007 TTA007 Silicon PNP Transistor Toshiba Semiconductor