TTA008B Datasheet, Transistors, Toshiba

TTA008B Features

• Transistors (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns

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Part number:

TTA008B

Manufacturer:

Toshiba ↗

File Size:

313.29kb

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📄 Datasheet

Description:

Silicon pnp epitaxial type bipolar transistors.

TTA008B Application

• Applications
• Power Amplifiers
• Power Switching 2. Features (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low

TAGS

TTA008B

Toshiba

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