TTA008B Datasheet - Toshiba

TTA008B, Silicon PNP Epitaxial Type Bipolar Transistors

Bipolar Transistors Silicon PNP Epitaxial Type TTA008B 1.Applications * Power Amplifiers * Power Switching 2..

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TTA008B-Toshiba.pdf

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Datasheet Details

Part number:

TTA008B

Manufacturer:

Toshiba ↗

File Size:

313.29 KB

Description:

Silicon PNP Epitaxial Type Bipolar Transistors

Features

* (1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ. ) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2.

Applications

* Power Amplifiers

TTA008B Distributors

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TTA008B Silicon PNP Epitaxial Type Bipolar Transistors Toshiba

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