TTA008B - Silicon PNP Epitaxial Type Bipolar Transistors

Toshiba

Datasheet Details

Part number	TTA008B
Manufacturer	Toshiba ↗
File Size	313.29 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA008B-Toshiba.pdf

(1) High DC current gain : hFE = 100 to 200 (IC = -0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1A) (3) High-speed switching : tstg = 300 ns (typ. ) (IC = -1A) (4) Complementary to TTC015B 3. Packaging and Internal Circuit (Note) TTA008B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated d.

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Published: Apr 29, 2024 |