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TTA003 Datasheet - Toshiba

TTA003 Silicon PNP Epitaxial Type Bipolar Transistors

TTA003 Features

* (1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T

TTA003-Toshiba.pdf

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Datasheet Details

Part number:

TTA003

Manufacturer:

Toshiba ↗

File Size:

177.81 KB

Description:

Silicon pnp epitaxial type bipolar transistors.

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TTA003 TTA003 Silicon PNP Epitaxial Type Bipolar Transistors Toshiba

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