TTA003 - Silicon PNP Epitaxial Type Bipolar Transistors

Toshiba

Datasheet Details

Part number	TTA003
Manufacturer	Toshiba ↗
File Size	177.81 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA003-Toshiba.pdf

(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ. ) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power di.

📁 TTA003 Similar Datasheet

Other Datasheets by Toshiba

Published: Apr 29, 2024 |