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TTA005 Datasheet - Toshiba

TTA005 Silicon PNP Epitaxial Type Bipolar Transistors

TTA005 Features

* (1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 55 ns (typ.) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolu

TTA005-Toshiba.pdf

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Datasheet Details

Part number:

TTA005

Manufacturer:

Toshiba ↗

File Size:

203.64 KB

Description:

Silicon pnp epitaxial type bipolar transistors.

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TTA005 TTA005 Silicon PNP Epitaxial Type Bipolar Transistors Toshiba

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