TTA005 - Silicon PNP Epitaxial Type Bipolar Transistors

Toshiba

Datasheet Details

Part number	TTA005
Manufacturer	Toshiba ↗
File Size	203.64 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA005-Toshiba.pdf

(1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed switching: tf = 55 ns (typ. ) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltag.

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Published: Apr 29, 2024 |