TTA005 Datasheet, Transistors, Toshiba

✔ TTA005 Features

(1) High DC current gain: hFE = 200 to 500 (IC = -0.5 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.27 V (max) (IC = -1.6 A, IB = -53 mA) (3) High-speed

✔ TTA005 Application

High-Speed Switching
DC-DC Converters 2. Features (1) High DC current gain: hFE = 200 to 500 (IC = -0.5

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TTA005

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📄 Datasheet

Description:

Silicon pnp epitaxial type bipolar transistors.

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TTA005 Silicon PNP Epitaxial Type Bipolar Transistors Toshiba