TTA004B - Silicon PNP Epitaxial Type Bipolar Transistors

Toshiba

Datasheet Details

Part number	TTA004B
Manufacturer	Toshiba ↗
File Size	183.59 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA004B-Toshiba.pdf

(1) High collector voltage: VCEO = -160 V (min) (2) Complementary to TTC004B (3) Small collector output capacitance: Cob = 17 pF (typ. ) (4) High transition frequency: fT = 100 MHz (typ. ) 3. Packaging and Internal Circuit (Note) TTA004B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to elec.

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Published: Oct 9, 2018 |