TTA009 - Silicon PNP Epitaxial Type Bipolar Transistors

Toshiba

Datasheet Details

Part number	TTA009
Manufacturer	Toshiba ↗
File Size	219.19 KB
Description	Silicon PNP Epitaxial Type Bipolar Transistors
Datasheet	TTA009-Toshiba.pdf

(1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ. ) (IC = -1 A) 3. Packaging and Internal Circuit TTA009 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-04 1 2015-06-19 Rev.1.0 TTA009 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter volt.

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Published: Apr 29, 2024 |