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TTA009

Silicon PNP Epitaxial Type Bipolar Transistors

TTA009 Features

* (1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ.) (IC = -1 A) 3. Packaging and Internal Circuit TTA009 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-04 1 2015

TTA009 Datasheet (219.19 KB)

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Datasheet Details

Part number:

TTA009

Manufacturer:

Toshiba ↗

File Size:

219.19 KB

Description:

Silicon pnp epitaxial type bipolar transistors.

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TTA009 Silicon PNP Epitaxial Type Bipolar Transistors Toshiba

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