2SB993 SILICON PNP TRANSISTOR

Toshiba

Description

* SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB993 HIGH CURRENT SWITCHING APPLICATIONS.POWER AMPLIFIER APPLICATIONS..

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Datasheet Specifications

Part number: 2SB993
Manufacturer: Toshiba ↗
File Size: 133.12 KB
Datasheet: 2SB993-Toshiba.pdf
Description: SILICON PNP TRANSISTOR

Features

* . High Collector Current : Ic 7A . Low Collector Saturation Voltage : VC E(sat)=-0.4V(Max. ) (at Ic=-4A) . High Collector Power Dissipation : P C=40W (at Tc=25°C) . Complementary to 2SD1363 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VcBO Collector-Emitter Vol

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2SB993 SILICON PNP TRANSISTOR Toshiba

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