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2SB995 SILICON PNP TRANSISTOR

2SB995 Description

: 2SB995 SILICON PIMP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS..

2SB995 Features

* . High Breakdown Voltage : VCEq=-100V . Low Collector-Emitter Saturation Voltage : V C E(sat)=-2.0V(Max. ) . Complementary to 2SD1355 . Recommended for 30W High-Fidelity Audio Frequency Amplifier Output Stage. Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emit

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SILICON PNP TRANSISTOR Toshiba
Toshiba 2SB995-like datasheet