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2SD1460 Datasheet - Toshiba

2SD1460 - Silicon NPN Transistor

2SD1460 Features

* . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO VCEO RATIN

2SD1460_Toshiba.pdf

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Datasheet Details

Part number:

2SD1460

Manufacturer:

Toshiba ↗

File Size:

92.60 KB

Description:

Silicon npn transistor.

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