2SD1460 Datasheet, Transistor, Toshiba

2SD1460 Features

• Transistor . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm 025.OMAX. M

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Part number:

2SD1460

Manufacturer:

Toshiba ↗

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92.60kb

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📄 Datasheet

Description:

Silicon npn transistor.

2SD1460 Application

• Applications FEATURES . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Bu

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2SD1460

Toshiba

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