2SD1460 - Silicon NPN Transistor
2SD1460 Features
* . High Collector Current : Ic=30A . High DC Current Gain : hFE=1000(Min. (V C e=5V, Ic=20A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL v CBO VCEO RATIN
