2SD1466 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1466 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: 2SD1466
Manufacturer: INCHANGE
File Size: 202.12 KB
Datasheet: 2SD1466-INCHANGE.pdf
Description: NPN Transistor

Applications

* Power amplification applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak PC Collect

2SD1466 Distributors

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2SD1466 NPN Transistor INCHANGE

INCHANGE 2SD1466-like datasheet