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2SD1466 - NPN Transistor

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Part number 2SD1466
Manufacturer INCHANGE
File Size 202.12 KB
Description NPN Transistor
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Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 8A High DC Current Gain : hFE= 200(Min) @ IC= 15A, VCE= 3V 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplification applications.

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