2SD1466 - NPN Transistor
*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min) * Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 8A *High DC Current Gain : hFE= 200(Min) @ IC= 15A, VCE= 3V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance
