2SD1466 Datasheet - INCHANGE

2SD1466, NPN Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1466 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 450V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

datasheet Preview Page 1 from Datasheet4u.com

2SD1466-INCHANGE.pdf

2SD1466 Datasheet Preview — Preview of 2SD1466 PDF

Datasheet Details

Part number:

2SD1466

Manufacturer:

INCHANGE

File Size:

202.12 KB

Description:

NPN Transistor

Applications

* Power amplification applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak PC Collect

2SD1466 Distributors

📁 Related Datasheet

2SD1460 2SD1468 2SD1468S 2SD1401 2SD1405 2SD1406

📌 All Tags

2SD1466 NPN Transistor INCHANGE

INCHANGE 2SD1466-like datasheet