Datasheet Details
| Part number | 2SD1409 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 209.31 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD1409-INCHANGE.pdf
|
| Part number | 2SD1409 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 209.31 KB |
| Description | NPN Transistor |
| Datasheet |
2SD1409-INCHANGE.pdf
|
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-C
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