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2SD1409 NPN Transistor

2SD1409 Description

isc Silicon NPN Darlington Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V. Minimum Lot-to-L.

2SD1409 Applications

* Igniter applications
* High voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Curr

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Datasheet Details

Part number
2SD1409
Manufacturer
INCHANGE
File Size
209.31 KB
Datasheet
2SD1409-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1409-like datasheet