2SD799 Datasheet - Toshiba

2SD799 Silicon NPN Transistor

2SD799 Features

* High DC Current Gain : hFE=600(Min. ) (VCE=2V,I C=2A)

* Monolithic Construction with Built-in Base- Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 10.5MAX ., _gf3.6±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitt

2SD799-Toshiba.pdf

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Datasheet Details

Part number:

2SD799

Manufacturer:

Toshiba ↗

File Size:

116.82 KB

Description:

Silicon npn transistor.

2SD799 Distributor

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2SD799 2SD799 Silicon NPN Transistor Toshiba