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Switching Diodes Silicon Epitaxial Planar
BAV99W
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
BAV99W
1: Anode 1 2: Cathode 2 3: Cathode 1/Anode 2
USM
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
100 V
Reverse voltage
VR
100
Peak forward current
IFM (Note 1)
500 mA
Average rectified current
IO (Note 2)
150
Non-repetitive peak forward surge current
IFSM (Note 2), (Note 3)
2
A
Power dissipation
PD
100 mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
BAV99W Datasheet
