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C4781 2SC4781

C4781 Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4781 Strobe Flash Applications Medium Power Amplifier Applications 2SC4781 Unit: mm <.

C4781 Applications

* Medium Power Amplifier Applications 2SC4781 Unit: mm
* High DC current gain and Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A) : hFE (2) = 300 (typ. ) (VCE = 2 V, IC = 4 A)
* Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80 mA) Absolute Maxim

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2SC4781 Toshiba
Toshiba C4781-like datasheet