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CLS10F40 Datasheet - Toshiba

CLS10F40 Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial CLS10F40 1. Applications Low-Voltage High-Speed Switching 2. Packaging and Internal Circuit CLS10F40 1: Cathode 2: Anode CL2E 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 1.0 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150 Storage temperat.

CLS10F40-Toshiba.pdf

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Datasheet Details

Part number:

CLS10F40

Manufacturer:

Toshiba ↗

File Size:

196.34 KB

Description:

Schottky barrier diode.

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CLS10F40 CLS10F40 Schottky Barrier Diode Toshiba

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