HN2D01F Datasheet (Toshiba) - Silicon Epitaxial Planar Type Diode

HN2D01F, Silicon Epitaxial Planar Type Diode

HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm HN2D01F is composed of 3 independent diodes.

Low forward voltage : VF (3) = 0.98 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.5 μF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward curre