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HN2D01F Datasheet - Toshiba

HN2D01F Silicon Epitaxial Planar Type Diode

HN2D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01F Ultra High Speed Switching Application Unit: mm HN2D01F is composed of 3 independent diodes. Low forward voltage : VF (3) = 0.98 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 0.5 μF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward curre.

HN2D01F-Toshiba.pdf

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Datasheet Details

Part number:

HN2D01F

Manufacturer:

Toshiba ↗

File Size:

523.26 KB

Description:

Silicon epitaxial planar type diode.

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HN2D01F HN2D01F Silicon Epitaxial Planar Type Diode Toshiba

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