HN2D01JE - Silicon Epitaxial Planar Type Diode

Toshiba

Datasheet Details

Part number	HN2D01JE
Manufacturer	Toshiba
File Size	307.54 KB
Description	Silicon Epitaxial Planar Type Diode
Datasheet	HN2D01JE Datasheet
Additional preview pages of the HN2D01JE datasheet.

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Full PDF Text Transcription

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TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application HN2D01JE Unit: mm ⚫ The HN2D01JE is composed of 2 independent diodes. ⚫ Low forward voltage : VF (3) = 0.98V (typ.) ⚫ Fast reverse recovery time : trr = 1.6ns (typ.) ⚫ Small total capacitance : CT = 0.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) (Note) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Reverse voltage Maximum (peak) forward current (Notre1) Average forward current (Notre1) Surge current (10ms) (Notre1) VR IFM IO IFSM 80 V 200 mA 100 mA 1 A 1.ANODE1 2.NC 3.ANODE2 4.CATHODE2 5.

Published: May 20, 2024 |