HN2D01JE Datasheet (Toshiba) - Silicon Epitaxial Planar Type Diode

HN2D01JE, Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application HN2D01JE Unit: mm The HN2D01JE is composed of 2 independent diodes.

Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) (Note) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Reverse voltage Maximum (peak) forward curren