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HN2D01JE Datasheet - Toshiba

HN2D01JE Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application HN2D01JE Unit: mm The HN2D01JE is composed of 2 independent diodes. Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Absolute Maximum Ratings (Ta = 25°C) (Note) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 85 V Reverse voltage Maximum (peak) forward curren.

HN2D01JE-Toshiba.pdf

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Datasheet Details

Part number:

HN2D01JE

Manufacturer:

Toshiba ↗

File Size:

307.54 KB

Description:

Silicon epitaxial planar type diode.

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HN2D01JE HN2D01JE Silicon Epitaxial Planar Type Diode Toshiba

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