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HN2D03F Datasheet - Toshiba

HN2D03F Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN2D03F High-Speed Switching Application z Small package z Low forward voltage z Small total capacitance : VF (2) = 0.94 V (typ.) : CT = 2.5 pF (typ.) HN2D03F Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) Power dissipation J.

HN2D03F-Toshiba.pdf

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Datasheet Details

Part number:

HN2D03F

Manufacturer:

Toshiba ↗

File Size:

243.61 KB

Description:

Silicon epitaxial planar type diode.

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HN2D03F HN2D03F Silicon Epitaxial Planar Type Diode Toshiba

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