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HN2D03F - Silicon Epitaxial Planar Type Diode

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Part number HN2D03F
Manufacturer Toshiba
File Size 243.61 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet HN2D03F Datasheet
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TOSHIBA Diode Silicon Epitaxial Planar Type HN2D03F High-Speed Switching Application z Small package z Low forward voltage z Small total capacitance : VF (2) = 0.94 V (typ.) : CT = 2.5 pF (typ.) HN2D03F Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300* mA Average forward current IO 100* mA Surge current (10ms) Power dissipation Junction temperature Storage temperature IFSM P Tj Tstg 2* A 300** mW 150 °C −55 to 150 °C 1.CATHODE(C1) 2.CATHODE(C2) 3.CATHODE(C3) 4.ANODE (A3) 5.ANODE (A2) 6.ANODE (A1) Note: Using continuously under heavy loads (e.g.
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