HN2D03F Datasheet (Toshiba) - Silicon Epitaxial Planar Type Diode

HN2D03F, Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN2D03F High-Speed Switching Application z Small package z Low forward voltage z Small total capacitance : VF (2) = 0.94 V (typ.) : CT = 2.5 pF (typ.) HN2D03F Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) Power dissipation J