Datasheet4U Logo Datasheet4U.com

HN2D03F Datasheet - Toshiba

HN2D03F Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN2D03F High-Speed Switching Application z Small package z Low forward voltage z Small total capacitance : VF (2) = 0.94 V (typ.) : CT = 2.5 pF (typ.) HN2D03F Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) Power dissipation J.

HN2D03F Datasheet (243.61 KB)

Preview of HN2D03F PDF
HN2D03F Datasheet Preview Page 2 HN2D03F Datasheet Preview Page 3

Datasheet Details

Part number:

HN2D03F

Manufacturer:

Toshiba ↗

File Size:

243.61 KB

Description:

Silicon epitaxial planar type diode.

📁 Related Datasheet

HN2D01F Silicon Epitaxial Planar Type Diode (Toshiba)

HN2D01FU Silicon Epitaxial Planar Type Diode (Toshiba)

HN2D01JE Silicon Epitaxial Planar Type Diode (Toshiba)

HN2D02FU Silicon Epitaxial Planar Type Diode (Toshiba)

HN2029CG (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)

HN2063CG (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)

HN2064CG (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)

HN2066CG (HN20xxCG) 10/100 Base-T Dual Port Transformer (Mingtek)

TAGS

HN2D03F Silicon Epitaxial Planar Type Diode Toshiba

HN2D03F Distributor