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HN2D01FU Datasheet - Toshiba

HN2D01FU Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01FU Ultra High Speed Switching Application HN2D01FU Unit: mm AEC-Q101 Qualified (Note1) HN2D01FU is composed of 3 independent diodes. Low forward voltage: VF (3) = 0.98V (typ.) Fast reverse recovery time: trr = 1.6ns (typ.) Small total capacitance: CT = 0.5pF (typ.) Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) rev.

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Datasheet Details

Part number:

HN2D01FU

Manufacturer:

File Size:

685.42 KB

Description:

Silicon epitaxial planar type diode.

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HN2D01FU HN2D01FU Silicon Epitaxial Planar Type Diode Toshiba

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