Datasheet4U Logo Datasheet4U.com

TBC327 Silicon PNP Transistor

TBC327 Description

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS.NPN COMPLEMENTS.

TBC327 Features

* . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max. ) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Brea

📥 Download Datasheet

Preview of TBC327 PDF

📁 Related Datasheet

  • TBC-DS - Hall Current Sensor (Token Electronics)
  • TBC06DS - Hall Current Sensor (Token Electronics)
  • TBC0747 - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBC0748 - Operational Amplifier (Siemens)
  • TBC1458 - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBC15DS - Hall Current Sensor (Token Electronics)
  • TBC2332 - DUAL OPERATIONAL AMPLIFIER (Siemens)
  • TBC25C04 - Hall Current Sensor (Token Electronics)

📌 All Tags

Silicon PNP Transistor Toshiba
Toshiba TBC327-like datasheet