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TBC327 Datasheet - Toshiba

TBC327 Silicon PNP Transistor

TBC327 Features

* . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Brea

TBC327 Datasheet (35.51 KB)

Preview of TBC327 PDF

Datasheet Details

Part number:

TBC327

Manufacturer:

Toshiba ↗

File Size:

35.51 KB

Description:

Silicon pnp transistor.

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TBC327 Silicon PNP Transistor Toshiba

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