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TBC327 - Silicon PNP Transistor

Features

  • . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max. ) at Ic=-500mA.

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Full PDF Text Transcription

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS ARE TBC337 AND TBC338. Unit in mm FEATURES . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Breakdown Voltage v (BR)EBO Collector Current DC ic Peak ICP Base Current (DC) IB Collector Power Dissipation PC Junction Temperature Storage Temperature Range Lstg RATING -50 -30 -45 -25 -500 -1000 -100 625 150 -65-150 UNIT mA mA mW 1. COLLECTOR 2. EASE 3. EMITTER EI A J Weight : 0.
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