Datasheet Specifications
- Part number
- TBC327
- Manufacturer
- Toshiba ↗
- File Size
- 35.51 KB
- Datasheet
- TBC327-Toshiba.pdf
- Description
- Silicon PNP Transistor
Description
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS.NPN COMPLEMENTS.
Features
* . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max. ) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base BreaTBC327 Distributors
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