Datasheet4U Logo Datasheet4U.com

TBC327 Datasheet - Toshiba

TBC327 Silicon PNP Transistor

TBC327 Features

* . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Brea

TBC327 Datasheet (35.51 KB)

Preview of TBC327 PDF

Datasheet Details

Part number:

TBC327

Manufacturer:

Toshiba ↗

File Size:

35.51 KB

Description:

Silicon pnp transistor.

📁 Related Datasheet

TBC328 Silicon PNP Transistor (Toshiba)

TBC337 Silicon NPN Transistor (Toshiba)

TBC338 Silicon NPN Transistor (Toshiba)

TBC-DS Hall Current Sensor (Token Electronics)

TBC06DS Hall Current Sensor (Token Electronics)

TBC0747 DUAL OPERATIONAL AMPLIFIER (Siemens)

TBC0748 Operational Amplifier (Siemens)

TBC1458 DUAL OPERATIONAL AMPLIFIER (Siemens)

TAGS

TBC327 Silicon PNP Transistor Toshiba

TBC327 Distributor