Datasheet4U Logo Datasheet4U.com

TBC328

Silicon PNP Transistor

TBC328 Features

* . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Brea

TBC328 Datasheet (35.51 KB)

Preview of TBC328 PDF

Datasheet Details

Part number:

TBC328

Manufacturer:

Toshiba ↗

File Size:

35.51 KB

Description:

Silicon pnp transistor.
: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS.

📁 Related Datasheet

TBC327 Silicon PNP Transistor (Toshiba)

TBC337 Silicon NPN Transistor (Toshiba)

TBC338 Silicon NPN Transistor (Toshiba)

TBC-DS Hall Current Sensor (Token Electronics)

TBC06DS Hall Current Sensor (Token Electronics)

TBC0747 DUAL OPERATIONAL AMPLIFIER (Siemens)

TBC0748 Operational Amplifier (Siemens)

TBC1458 DUAL OPERATIONAL AMPLIFIER (Siemens)

TBC15DS Hall Current Sensor (Token Electronics)

TBC2332 DUAL OPERATIONAL AMPLIFIER (Siemens)

TAGS

TBC328 Silicon PNP Transistor Toshiba

TBC328 Distributor