Datasheet4U Logo Datasheet4U.com

TBC328, TBC327 Datasheet - Toshiba

TBC328 Silicon PNP Transistor

TBC328 Features

* . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Brea

TBC327-Toshiba.pdf

This datasheet PDF includes multiple part numbers: TBC328, TBC327. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

TBC328, TBC327

Manufacturer:

Toshiba ↗

File Size:

35.51 KB

Description:

Silicon pnp transistor.

Note:

This datasheet PDF includes multiple part numbers: TBC328, TBC327.
Please refer to the document for exact specifications by model.

TBC328 Distributor

📁 Related Datasheet

TBC327 Silicon PNP Transistor (Toshiba)

TBC337 Silicon NPN Transistor (Toshiba)

TBC338 Silicon NPN Transistor (Toshiba)

TBC-DS Hall Current Sensor (Token Electronics)

TBC06DS Hall Current Sensor (Token Electronics)

TBC0747 DUAL OPERATIONAL AMPLIFIER (Siemens)

TBC0748 Operational Amplifier (Siemens)

TBC1458 DUAL OPERATIONAL AMPLIFIER (Siemens)

TAGS

TBC328 TBC327 Silicon PNP Transistor Toshiba