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TBC328 - Silicon PNP Transistor

This page provides the datasheet information for the TBC328, a member of the TBC327 Silicon PNP Transistor family.

Datasheet Summary

Features

  • . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max. ) at Ic=-500mA.

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Datasheet preview – TBC328

Datasheet Details

Part number TBC328
Manufacturer Toshiba
File Size 35.51 KB
Description Silicon PNP Transistor
Datasheet download datasheet TBC328 Datasheet
Additional preview pages of the TBC328 datasheet.

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Other Datasheets by Toshiba
  • TBC327 - Silicon PNP Transistor
  • TBC337 - Silicon NPN Transistor
  • TBC338 - Silicon NPN Transistor
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  • TBC550 - Silicon NPN Transistor

Full PDF Text Transcription

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS ARE TBC337 AND TBC338. Unit in mm FEATURES . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Breakdown Voltage v (BR)EBO Collector Current DC ic Peak ICP Base Current (DC) IB Collector Power Dissipation PC Junction Temperature Storage Temperature Range Lstg RATING -50 -30 -45 -25 -500 -1000 -100 625 150 -65-150 UNIT mA mA mW 1. COLLECTOR 2. EASE 3. EMITTER EI A J Weight : 0.
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