TBC328, TBC327 Silicon PNP Transistor

Toshiba

Description

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS.NPN COMPLEMENTS.

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TBC328 Datasheet Preview — This datasheet PDF includes multiple part numbers: TBC328, TBC327. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TBC328, TBC327
Manufacturer: Toshiba ↗
File Size: 35.51 KB
Datasheet: TBC327-Toshiba.pdf
Description: Silicon PNP Transistor
Note: This datasheet PDF includes multiple part numbers: TBC328, TBC327.
Please refer to the document for exact specifications by model.

Features

* . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max. ) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v (BR)CBO TBC328 Collector-Emitter Breakdown Voltage TBC327 v (BR) CEO TBC328 Emitter-Base Brea

TBC328 Distributors

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TBC327 Silicon PNP Transistor Toshiba

Toshiba TBC328-like datasheet