Datasheet Specifications
- Part number
- TBC337
- Manufacturer
- Toshiba ↗
- File Size
- 34.96 KB
- Datasheet
- TBC337-Toshiba.pdf
- Description
- Silicon NPN Transistor
Description
: TBC337 TBC338 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS.PNP COMPLEMENTS.
Features
* . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max. ) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC337 TBC338 Collector-Emitter BrTBC337 Distributors
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