TBC549
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Silicon npn transistor.
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TBC546 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
FEATURES . High VqeO
High hpE Low Noise
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TBC547 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
FEATURES . High VqeO
High hpE Low Noise
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TBC548 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
FEATURES . High VqeO
High hpE Low Noise
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TBC50C04 - Hall Current Sensor
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KEN R
TBC25C04/TBC50C04
TBC25C04/TBC50C04 、，、.
（）
-40℃～+85℃
50(60)HZ,1min
di/dt
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@70℃
TBC25C04 25
0～±55 .
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19.2 960 1% 100 0.5% 0.625 0.5%
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TBC15DS 15 48
1200 1% 100 0.5% 0.625 0.5%
TBC25DS
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TBC550 - Silicon NPN Transistor
(Toshiba)
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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS.
FEATURES . Low Noise : 4dB Max. (TBC549)
3dB .
TBC556 - Silicon PNP Transistor
(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC556 TBC557 TBC558
PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.
Unit in mm
FEATURES . H.
TBC557 - Silicon PNP Transistor
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC556 TBC557 TBC558
PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.
Unit in mm
FEATURES . H.
TBC558 - Silicon PNP Transistor
(Toshiba)
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC556 TBC557 TBC558
PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.
Unit in mm
FEATURES . H.
TBC559 - Silicon PNP Transistor
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC559 TBC560
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
THE TBC559 AND TBC560 IS LOW .
