Datasheet Specifications
- Part number
- TBC549
- Manufacturer
- Toshiba ↗
- File Size
- 52.35 KB
- Datasheet
- TBC549-Toshiba.pdf
- Description
- Silicon NPN Transistor
Description
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR LOW NOISE STAGE OF AUDIO AMPLIFIERS..Features
* . Low Noise : 4dB Max. (TBC549) 3dB Max. (TBC550) . High V CE o : 30V (TBC549) 45V (TBC550) . High hpE : 200 ~800 5MAX. jiil TBC549 TBC550 Unit in mm MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC549 V(BR)CBO TBC550 Collector-Emitter Breakdown Voltage TTBC549 Distributors
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