TBC560, TBC559 Silicon PNP Transistor

Toshiba

Description

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC559 TBC560 PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.THE TBC559 AND TBC560 IS LOW .

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TBC560 Datasheet Preview — This datasheet PDF includes multiple part numbers: TBC560, TBC559. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: TBC560, TBC559
Manufacturer: Toshiba ↗
File Size: 53.07 KB
Datasheet: TBC559-Toshiba.pdf
Description: Silicon PNP Transistor
Note: This datasheet PDF includes multiple part numbers: TBC560, TBC559.
Please refer to the document for exact specifications by model.

Features

* . High V CE0 : -45V (TBC560) -25V (TBC559) . High hFE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- 0.45 I'] O. E35 MAX. 1 r J C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 1.27 X 23J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC559 v (BR)CBO

TBC560 Distributors

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TBC559 Silicon PNP Transistor Toshiba

Toshiba TBC560-like datasheet