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TC511001P-85 DRAM

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Description

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS .
TC511001 P/J/Z-S5, TC511001 P/J/Z-l0 TC511 001 P/J/Z-12 The TC5ll00lP/J/Z is the new generation dynamic R&~ organized 1,048,576 ~vords by 1 bit.

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Features

* include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The special feature of TC5Il00IP/J/Z is nibble mode, allowing the user to serially access 4 bits of data at a high data r

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