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TC58NVG2D4BFT00 Datasheet - Toshiba

4 GBIT (512M X 8 BIT) CMOS NAND E2PROM

TC58NVG2D4BFT00 Features

* Organization Memory cell array Register Page size Block size

* TC58NVG2D4B 2112 × 256K × 8 2112 × 8 2112 bytes (256K + 4K) bytes Modes Read, Read with Data Cache, Reset, Auto Page Program, Auto Page Program with Data Cache, Multi Page Program with Cache, Auto Block Erase, Status R

TC58NVG2D4BFT00 General Description

The TC58NVG2D4B is a single 3.3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 2048 blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between.

TC58NVG2D4BFT00 Datasheet (634.22 KB)

Preview of TC58NVG2D4BFT00 PDF

Datasheet Details

Part number:

TC58NVG2D4BFT00

Manufacturer:

Toshiba ↗

File Size:

634.22 KB

Description:

4 gbit (512m x 8 bit) cmos nand e2prom.
TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG2D4BFT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM (M.

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TAGS

TC58NVG2D4BFT00 GBIT 512M BIT CMOS NAND E2PROM Toshiba

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