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TC58NVG2D4BFT00 4 GBIT (512M X 8 BIT) CMOS NAND E2PROM

TC58NVG2D4BFT00 Description

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG2D4BFT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM (M.
The TC58NVG2D4B is a single 3.

TC58NVG2D4BFT00 Features

* Organization Memory cell array Register Page size Block size
* TC58NVG2D4B 2112 × 256K × 8 2112 × 8 2112 bytes (256K + 4K) bytes Modes Read, Read with Data Cache, Reset, Auto Page Program, Auto Page Program with Data Cache, Multi Page Program with Cache, Auto Block Erase, Status R

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GBIT 512M BIT CMOS NAND E2PROM Toshiba
Toshiba TC58NVG2D4BFT00-like datasheet