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TC58NVG2S0HBAI4 Datasheet - Toshiba

4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

TC58NVG2S0HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TC58NVG2S0HBAI4 General Description

The TC58NVG2S0HBAI4 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TC58NVG2S0HBAI4 Datasheet (479.09 KB)

Preview of TC58NVG2S0HBAI4 PDF

Datasheet Details

Part number:

TC58NVG2S0HBAI4

Manufacturer:

Toshiba ↗

File Size:

479.09 KB

Description:

4 gbit (512m x 8 bit) cmos nand e2prom.

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TAGS

TC58NVG2S0HBAI4 GBIT 512M BIT CMOS NAND E2PROM Toshiba

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