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TC58NVG2S0HTAI0

4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

TC58NVG2S0HTAI0 Features

* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TC58NVG2S0HTAI0 General Description

The TC58NVG2S0HTAI0 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TC58NVG2S0HTAI0 Datasheet (479.97 KB)

Preview of TC58NVG2S0HTAI0 PDF

Datasheet Details

Part number:

TC58NVG2S0HTAI0

Manufacturer:

Toshiba ↗

File Size:

479.97 KB

Description:

4 gbit (512m x 8 bit) cmos nand e2prom.

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TAGS

TC58NVG2S0HTAI0 GBIT 512M BIT CMOS NAND E2PROM Toshiba

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