TC58NVG2S0HBAI6 Datasheet, E2prom, Toshiba

✔ TC58NVG2S0HBAI6 Features

Organization x8 Memory cell array 4352 × 128K × 8 Register 4352 × 8 Page size 4352 bytes Block size (256K + 16K) bytes
Modes Read, Reset, Auto Page Program,

✔ TC58NVG2S0HBAI6 Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems whi

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TC58NVG2S0HBAI6

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📄 Datasheet

Description:

4g-bit (512m x 8 bit) cmos nand e2prom. The TC58NVG2S0HBAI6 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E

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📁 Related Datasheet

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TC58NVG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0HBAI4 is a .

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IC FLASH 4GBIT PARALLEL 67VFBGA

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TC58NVG2S0HBAI6

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Unit Price : $2.96

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TC58NVG2S0HBAI6 4G-BIT 512M BIT CMOS NAND E2PROM Toshiba