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TC58NVG2S0HBAI6 Datasheet - Toshiba

4G-BIT (512M x 8 BIT) CMOS NAND E2PROM

TC58NVG2S0HBAI6 Features

* Organization x8 Memory cell array 4352 × 128K × 8 Register 4352 × 8 Page size 4352 bytes Block size (256K + 16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TC58NVG2S0HBAI6 General Description

The TC58NVG2S0HBAI6 is a single 3.3V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred betwe.

TC58NVG2S0HBAI6 Datasheet (489.78 KB)

Preview of TC58NVG2S0HBAI6 PDF

Datasheet Details

Part number:

TC58NVG2S0HBAI6

Manufacturer:

Toshiba ↗

File Size:

489.78 KB

Description:

4g-bit (512m x 8 bit) cmos nand e2prom.

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TAGS

TC58NVG2S0HBAI6 4G-BIT 512M BIT CMOS NAND E2PROM Toshiba

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