TC58NVG2S3ETA00 - 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

Name: TC58NVG2S3ETA00
SKU: TC58NVG2S3ETA00-746631

Toshiba

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Datasheet Details

Part number	TC58NVG2S3ETA00
Manufacturer	Toshiba
File Size	555.41 KB
Description	4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58NVG2S3ETA00_Toshiba.pdf

TC58NVG2S3ETA00 Product details

Description

The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.

Features

Organization Memory cell array Register Page size Block size.
x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 4016 blocks Max 4096 blocks Power supply VCC = 2.7V to 3.6V Access time Cell array to register Serial Read Cycle Program/Erase time A.

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Published: Nov 18, 2013 |