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TC58NVG2S3ETA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

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Description

TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E PROM .
The TC58NVG2S3E is a single 3.

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Features

* Organization Memory cell array Register Page size Block size
* x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode cont

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GBIT 512M BIT CMOS NAND E2PROM Toshiba
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