TC58NVG2S3ETAI0 Datasheet, E2prom, Toshiba

✔ TC58NVG2S3ETAI0 Features

Organization Memory cell array Register Page size Block size x8 2112 × 256K × 8 2112 × 8 2112 bytes (128K + 4K) bytes
Modes Read, Reset, Auto Page Program, Auto Blo

✔ TC58NVG2S3ETAI0 Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems whi

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TC58NVG2S3ETAI0

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📄 Datasheet

Description:

4 gbit (512m x 8 bit) cmos nand e2prom. The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PRO

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📁 Related Datasheet

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Toshiba America Electronic Components

Bristol Electronics

TC58NVG2S3ETAI0

20 In Stock

Unit Price : $0

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TC58NVG2S3ETAI0 GBIT 512M BIT CMOS NAND E2PROM Toshiba