Datasheet4U.com

TK4A80E - N-Channel MOSFET

Toshiba

📥 Download Datasheet

TK4A80E Datasheet Preview — Preview of TK4A80E PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	TK4A80E
Manufacturer	Toshiba ↗
File Size	380.96 KB
Description	N-Channel MOSFET
Datasheet	TK4A80E-Toshiba.pdf

TK4A80E Product details

Features

(1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK4A80E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse.

📁 TK4A80E Similar Datasheet

TK4A - Current Transducer (Topstek)
TK4A50D - N-Channel MOSFET (Toshiba Semiconductor)
TK4A53D - N-Channel MOSFET (Toshiba Semiconductor)
TK4A55D - N-Channel MOSFET (Toshiba Semiconductor)
TK4A55DA - N-Channel MOSFET (Toshiba Semiconductor)
TK4A60 - N-Channel 650V Power MOSFET (VBsemi)
TK4A60D - N-Channel MOSFET (Toshiba Semiconductor)
TK4A60DB - N-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

TK4A60DA - N-Channel MOSFET
TK40S06N1L - N-channel MOSFET
TK430A60F - Silicon N-Channel MOSFET
TK4K1A60F - Silicon N-Channel MOSFET
TK4R1A10PL - Silicon N-Channel MOSFET
TK4R3A06PL - Silicon N-channel MOSFET

Published: Oct 4, 2020 |