Part number:
TK4A80E
Manufacturer:
File Size:
380.96 KB
Description:
N-channel mosfet.
* (1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit TK4A80E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum Ratings
TK4A80E
380.96 KB
N-channel mosfet.
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