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TK90S06N1L Datasheet - Toshiba

TK90S06N1L N-channel MOSFET

TK90S06N1L Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK90S06N1L DPAK+ 1: Gate 2: Drain (heatsink

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Datasheet Details

Part number:

TK90S06N1L

Manufacturer:

Toshiba ↗

File Size:

279.19 KB

Description:

N-channel mosfet.

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