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TK9J90E Datasheet - Toshiba

TK9J90E N-Channel MOSFET

TK9J90E Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9J90E TO-3P(N) 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial pr

TK9J90E Datasheet (225.59 KB)

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Datasheet Details

Part number:

TK9J90E

Manufacturer:

Toshiba ↗

File Size:

225.59 KB

Description:

N-channel mosfet.

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TK9J90E N-Channel MOSFET Toshiba

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