TK9A55DA - Silicon N-channel MOSFET

Datasheet Summary

Features

nspor.

Toshiba Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	TK9A55DA
Manufacturer	Toshiba Semiconductor
File Size	186.84 KB
Description	Silicon N-channel MOSFET
Datasheet	TK9A55DA Datasheet
Additional preview pages of the TK9A55DA datasheet.

📁 Similar Datasheet

TK9A55DA - N-Channel MOSFET (INCHANGE)
TK9A20DA - N-Channel MOSFET (INCHANGE)
TK9A45D - N-Channel MOSFET (INCHANGE)
TK9A60D - N-Channel MOSFET (INCHANGE)
TK9A65W - N-Channel MOSFET (Toshiba)
TK9A65W - N-Channel MOSFET (INCHANGE)
TK9A90E - N-Channel MOSFET (INCHANGE)
TK90S06N1L - N-channel MOSFET (Toshiba)
TK920M3A - InGaAs (Tyntek)
TK920M3B - InGaAs (Tyntek)

Other Datasheets by Toshiba Semiconductor

TK9A20DA - Silicon N-channel MOSFET
TK9A45D - Silicon N-channel MOSFET
TK9A60D - Silicon N-channel MOSFET
TK9A90E - Silicon N-channel MOSFET

Full PDF Text Transcription

Click to expand full text

TK9A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK9A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A • • • • Low drain-source ON resistance: RDS (ON) = 0.68 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.7 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement-mode: Vth = 2 to 4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 550 ±30 8.5 34 40 252 8.5 4 150 −55 to 150 Unit 2.54 0.64 ± 0.15 V V A W mJ A mJ °C °C 13 ± 0.5 15.0 ± 0.

Published: Sep 19, 2014 |