TK9A55DA Datasheet - Toshiba Semiconductor

TK9A55DA, Silicon N-channel MOSFET

TK9A55DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK9A55DA Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm .

Features

* nspor

Applications

* Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A
* Low drain-source ON resistance: RDS (ON) = 0.68 Ω (typ. ) High forward transfer admittance: ⎪Yfs⎪ = 4.7 S (typ. ) Low leakage current: IDSS = 10 μA

TK9A55DA-ToshibaSemiconductor.pdf