Datasheet Specifications
- Part number
- TK9A90E
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 225.36 KB
- Datasheet
- TK9A90E-ToshibaSemiconductor.pdf
- Description
- Silicon N-channel MOSFET
Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK9A90E 1.Applications * Switching Voltage Regulators 2..
Features
* (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9A90E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2TK9A90E Distributors
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