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TK9A90E

Silicon N-channel MOSFET

TK9A90E Features

* (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9A90E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2

TK9A90E Datasheet (225.36 KB)

Preview of TK9A90E PDF

Datasheet Details

Part number:

TK9A90E

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

225.36 KB

Description:

Silicon n-channel mosfet.

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TAGS

TK9A90E Silicon N-channel MOSFET Toshiba Semiconductor

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