TK9A90E - Silicon N-channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK9A90E
Manufacturer	Toshiba ↗ Semiconductor
File Size	225.36 KB
Description	Silicon N-channel MOSFET
Datasheet	TK9A90E-ToshibaSemiconductor.pdf

(1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9A90E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2013-10 1 2014-03-04 Rev.3.0 TK9A90E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drai.

📁 TK9A90E Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Sep 20, 2014 |