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TK9A90E - Silicon N-channel MOSFET

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Features

  • (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9A90E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2013-10 1 2014-03-04 Rev.3.0 TK9A90E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drai.

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Datasheet Details

Part number TK9A90E
Manufacturer Toshiba Semiconductor
File Size 225.36 KB
Description Silicon N-channel MOSFET
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MOSFETs Silicon N-Channel MOS (π-MOS) TK9A90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.0 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.9 mA) 3. Packaging and Internal Circuit TK9A90E TO-220SIS 1: Gate 2: Drain 3: Source Start of commercial production 2013-10 1 2014-03-04 Rev.3.0 TK9A90E 4.
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