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TK9A20DA

Silicon N-channel MOSFET

TK9A20DA Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.26 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK9A20DA 1: Gate (G) 2: Drain (D) 3: Source (S) TO-220SIS 4. Absolute Maximum R

TK9A20DA Datasheet (263.16 KB)

Preview of TK9A20DA PDF

Datasheet Details

Part number:

TK9A20DA

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

263.16 KB

Description:

Silicon n-channel mosfet.

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TK9A20DA Silicon N-channel MOSFET Toshiba Semiconductor

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