TK9A60D Datasheet - Toshiba Semiconductor

TK9A60D Silicon N-channel MOSFET

TK9A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK9A60D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 9 36 45 260 9 4.5 150 55 to 150 Unit V V A W mJ A mJ.

TK9A60D Features

* ns, safety devices, elevators and escalators, dev

TK9A60D-ToshibaSemiconductor.pdf