TK9R6E15Q5 - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) Fast reverse recovery time: trr = 40 ns (typ. ) (2) Small reverse recovery charge : Qrr = 32 nC (typ. ) (3) Small gate charge: QSW = 17 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode: Vth = 3.1 to 4.5 V (VDS = 10 V, ID = 1.1 mA) 3. Packaging and Internal Circuit TK9R6E15Q5 TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2023-2024 1 Toshiba Electronic Devices & Storage Corporat.

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Published: Feb 28, 2025 |