TK9R6E15Q5 - Silicon N-channel MOSFET
TK9R6E15Q5 Features
* (1) Fast reverse recovery time: trr = 40 ns (typ.) (2) Small reverse recovery charge : Qrr = 32 nC (typ.) (3) Small gate charge: QSW = 17 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 7.9 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (6) Enhancement mode:
