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TPH1R104PB Datasheet - Toshiba

TPH1R104PB Silicon N-channel MOSFET

TPH1R104PB Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPH1R104PB SOP Adva

TPH1R104PB-Toshiba.pdf

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Datasheet Details

Part number:

TPH1R104PB

Manufacturer:

Toshiba ↗

File Size:

565.02 KB

Description:

Silicon n-channel mosfet.

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