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TPH1R306P1 Datasheet - Toshiba

TPH1R306P1 Silicon N-channel MOSFET

TPH1R306P1 Features

* (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 77.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.96 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, I

TPH1R306P1 Datasheet (581.18 KB)

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Datasheet Details

Part number:

TPH1R306P1

Manufacturer:

Toshiba ↗

File Size:

581.18 KB

Description:

Silicon n-channel mosfet.

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TPH1R306P1 Silicon N-channel MOSFET Toshiba

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