TPH1R306P1 - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ. ) (3) Small output charge: Qoss = 77.5 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 0.96 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH1R306P1 SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial p.

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Published: Feb 26, 2025 |