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TPH1R306PL

Silicon N-channel MOSFET

TPH1R306PL Features

* (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Small output charge: Qoss = 77.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID

TPH1R306PL Datasheet (671.32 KB)

Preview of TPH1R306PL PDF

Datasheet Details

Part number:

TPH1R306PL

Manufacturer:

Toshiba ↗

File Size:

671.32 KB

Description:

Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH1R306PL 1. Applications

* High-Efficiency DC-DC Converters

* Switching Voltage Regulators .

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TPH1R306PL Silicon N-channel MOSFET Toshiba

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