TPH1R204PB - Silicon N-channel MOSFET
TPH1R204PB Features
* (1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ.) (3) Small output charge: Qoss = 56 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.85 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID
