TPHR6503PL - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ. ) (3) Small output charge: Qoss = 81.3 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 0.41 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPHR6503PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected.

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Published: Sep 11, 2019 |