* (1) High-speed switching (2) Small gate charge: QSW = 23 nC (typ.) (3) Small output charge: Qoss = 85.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.7 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID
TPHR8504PL Datasheet (610.76 KB)
TPHR8504PL
610.76 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPHR8504PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators .
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