TPHR8504PL1 - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge: QSW = 23 nC (typ. ) (3) Small output charge: Qoss = 85.4 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 0.7 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPHR8504PL1 SOP Advance(N) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercia.

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Published: Jul 30, 2025 |