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TPW1R005PL Datasheet - Toshiba

TPW1R005PL Silicon N-channel MOSFET

TPW1R005PL Features

* (1) High-speed switching (2) Small gate charge: QSW = 34 nC (typ.) (3) Small output charge: Qoss = 98 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.75 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID

TPW1R005PL-Toshiba.pdf

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Datasheet Details

Part number:

TPW1R005PL

Manufacturer:

Toshiba ↗

File Size:

764.16 KB

Description:

Silicon n-channel mosfet.

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