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TPW1R005PL - Silicon N-channel MOSFET

Toshiba

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Datasheet Details

Part number	TPW1R005PL
Manufacturer	Toshiba ↗
File Size	764.16 KB
Description	Silicon N-channel MOSFET
Datasheet	TPW1R005PL-Toshiba.pdf

TPW1R005PL Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 34 nC (typ. ) (3) Small output charge: Qoss = 98 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 0.75 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 45 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPW1R005PL DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial pr.

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Published: Aug 17, 2019 |